TESCAN 等离子体 FIB 与无漏磁超高分辨 SEMThe Perfect Fusion of Plasma FIB and Stray-Field-Free UHR-SEM
产品型号:AMBERX
简介介绍:大尺度 截面剖析 FIB-SEM 双束系统 氙气等离 无漏磁超 镜筒内 减速模式 可变真空
分析 三维重构 (FIB-SEM) 子源FIB 高分辨 探测器
镜筒 SEM
详情介绍
TESCAN AMBERX
等离子体 FIB 与无漏磁超高分辨 SEM 的融合
拓展材料表征应用的无限可能
TESCAN 等离子体 FIB 与无漏磁超高分辨 SEM主要特点:
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高效大面积样品制备: 可实现宽度达 1 毫米的截面刻蚀。
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无镓离子污染: 采用氙 (Xe) 等离子体离子源进行样品加工。
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超高分辨成像与分析: 集成 BrightBeam™ 无漏磁超高分辨 SEM 镜筒。
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智能高效的多模态表征: 独特分析型设计配合智能电子束优化,高效完成 2D/3D 多模态表征。
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快速定位: 利用 SEM 实时大视野成像及独特 3D 防撞模型,快速精准定位目标区域。
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用户友好操作: Essence™ 模块化电镜软件,显著简化多用户实验室工作流程。
TESCAN AMBERXTESCAN 等离子体 FIB 与无漏磁超高分辨 SEM
The Perfect Fusion of Plasma FIB and Stray-Field-Free UHR-SEM
Expanding the Boundaries of Materials Characterization
Key Features:
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High-Efficiency, Large-Area Sample Preparation: Enables cross-section milling with widths up to 1 mm.
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Gallium (Ga)-Free Processing: Utilizes a Xenon (Xe) plasma ion source for contamination-free sample modification.
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Ultra-High-Resolution Imaging & Analysis: Features the integrated BrightBeam™ stray-field-free UHR-SEM column.
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Intelligent Multi-Modal Characterization: Unique analytical design combined with intelligent beam optimization enables efficient 2D and 3D multi-modal characterization.
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Rapid and Safe Navigation: Leverages real-time, large-field-of-view SEM imaging and a unique 3D collision-avoidance model for fast and secure targeting of regions of interest (ROI).
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User-Friendly Operation: The Essence™ modular microscope software streamlines workflows in multi-user environments.
TESCAN 等离子体 FIB 与无漏磁超高分辨 SEMBrightBeam™ 无漏磁超高分辨 SEM 镜筒
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肖特基场发射电子枪
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电磁-静电复合物镜
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镜筒内电子加速器
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镜筒内多模式 SE/BSE 探测器
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电子束参数
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视野范围
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*大放大倍数:2–2,000,000×
i-FIB+ v1.5 等离子体 FIB 镜筒
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氙等离子体源(ECR 技术,寿命依实际使用而定)
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压电驱动 30 孔光阑变换器
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静电束闸 + 法拉第杯
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离子束参数
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能量:3–30 keV
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探针电流:1 pA–3 μA
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*大视野:1 mm
FIB-SEM 几何关系
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SEM 工作距离(重合点):6 mm
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FIB-SEM 夹角:55°
TESCAN 等离子体 FIB 与无漏磁超高分辨 SEM电子束分辨率
TESCAN 等离子体 FIB 与无漏磁超高分辨 SEM低真空模式分辨率
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1.8 nm @ 30 keV(GSD 探测器)
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3.0 nm @ 3 keV(GSD 探测器)
TESCAN 等离子体 FIB 与无漏磁超高分辨 SEM离子束分辨率
BrightBeam™ Stray-Field-Free UHR-SEM Column
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Schottky Field Emission Gun
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Electromagnetic-Electrostatic Compound Objective Lens
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In-column Electron Accelerator
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In-column Multi-mode SE/BSE Detectors
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Electron Beam Specifications
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Landing Energy: 50 eV–30 keV (<50 eV* in beam deceleration mode)
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Probe Current: 2 pA–400 nA (continuously adjustable)
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Beam Optimization: Electromagnetic Aperture Control
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Field of View
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Max. Magnification: 2–2,000,000×
i-FIB+ v1.5 Plasma FIB Column
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Xenon Plasma Ion Source (ECR technology, lifetime usage-dependent)
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Piezo-Driven 30-Aperture Selector
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Electrostatic Beam Blanker + Faraday Cup
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Ion Beam Specifications
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Energy: 3–30 keV
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Probe Current: 1 pA–3 μA
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Max. Field of View: 1 mm
FIB-SEM Geometry
Electron Beam Resolution
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1.5 nm @ 1 keV (stray-field-free)
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1.3 nm @ 1 keV (deceleration mode)*
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0.9 nm @ 15 keV (stray-field-free)
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0.8 nm @ 30 keV (stray-field-free STEM)*
Low Vacuum Resolution
Ion Beam Resolution