技术原理
双束等离子聚焦离子束显微镜（Dual Beam Plasma FIB，简称 P-FIB）采用氙离子（Xe⁺）作为离子源，其蚀刻速率较传统镓离子（Ga⁺）FIB 提升 20 倍。这一特性使其能够高效处理大范围结构，快速完成定点截面观察任务，突破了传统 Ga⁺ FIB 的技术局限。
此外，P-FIB 集成电子枪系统，可在切割过程中同步进行 SEM 成像，实时监测截面形貌并追踪缺陷动态变化。
除基础结构观测外，P-FIB 更适用于热点定位及非破坏性分析（NDA）后的验证。例如，在热发射显微镜（EMMI）、光学显微镜（OM）、3D X-ray 或声学扫描显微镜（SAT）检测到异常后，可通过 P-FIB 对目标区域进行精准截面验证。这一技术优势使其在封装与晶圆失效分析领域应用日益广泛。
分析应用
为提升分析效率，P-FIB 主要适用于以下结构与器件：
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3D/5D IC 集成电路
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TSV（硅通孔）
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C4 凸块/中介层/微凸块（C4 bump/interposer/u-bump）
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焊盘/焊点/二级焊点（Bond pad/1st bond/2nd bond）
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锡球/BGA 焊球（Solder bump/BGA ball）
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芯片背面（Chip backside）
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MEMS 器件
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组装件/PCB 电路板
Technical Principle
The Dual Beam Plasma Focused Ion Beam microscope (P-FIB) utilizes xenon ions (Xe⁺) as its ion source, achieving an etching rate 20 times faster than conventional gallium ion (Ga⁺) FIB systems. This capability enables efficient processing of large-scale structures and rapid completion of targeted cross-sectioning tasks, overcoming the limitations of traditional Ga⁺ FIB technology.
Furthermore, the P-FIB integrates an electron gun system, allowing simultaneous SEM imaging during milling. This facilitates real-time monitoring of cross-sectional morphology and dynamic defect evolution.
Beyond basic structural observation, P-FIB is particularly valuable for hotspot localization and post-non-destructive analysis (NDA) verification. For instance, upon detecting anomalies through thermal emission microscopy (EMMI), optical microscopy (OM), 3D X-ray, or scanning acoustic tomography (SAT), P-FIB enables precise cross-sectional validation at target regions. This technical advantage has led to its growing adoption in package and wafer failure analysis.
Analytical Applications
To enhance analysis efficiency, P-FIB is primarily applied to the following structures and devices:
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3D/5D ICs
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Through-Silicon Vias (TSVs)
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C4 bumps/Interposers/Micro-bumps
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Bond pads/1st bonds/2nd bonds
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Solder bumps/BGA balls
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Chip backside analysis
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MEMS devices
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Assemblies/PCBs
